Počet záznamů: 1

Photoemission from alfa and beta phases of the GaAs(001)-c(4x4) surface

  1. 1.
    0340742 - FZU-D 2010 RIV NL eng J - Článek v odborném periodiku
    Jiříček, Petr - Cukr, Miroslav - Bartoš, Igor - Sadowski, J.
    Photoemission from alfa and beta phases of the GaAs(001)-c(4x4) surface.
    Surface Science. Roč. 603, č. 20 (2009), s. 3088-3093 ISSN 0039-6028
    Grant CEP: GA ČR GA202/07/0601; GA AV ČR IAA100100628
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: gallium arsenide * angle resolved photoemission * synchrotron radiation photoelectron spectroscopy * molecular beam epitaxy * surface core level shift
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.798, rok: 2009

    The α and β phases of the GaAs(001)-c(4x4) surface were prepared by molecular beam epitaxy. The properties of these phases were studied by UPS and XPS using synchrotron radiation as an excitation source.
    Trvalý link: http://hdl.handle.net/11104/0183924