Počet záznamů: 1

Decomposition of mixed phase silicon Raman spectra

  1. 1.
    0339516 - FZU-D 2010 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
    Ledinský, Martin - Stuchlík, Jiří - Vetushka, Aliaksi - Fejfar, Antonín - Kočka, Jan
    Decomposition of mixed phase silicon Raman spectra.
    Amorphous and Polycrystalline Thin-Film Silicon Science and Technology — 2009. Warrendale, PA: Materials Research Society, 2009 - (Flewitt, A.; Wang, Q.; Hou, J.; Uchikoga, S.; Nathan, A.), s. 15-20. Material Research Society Symposium Proceedings, 1153. ISBN 978-1-60511-126-1.
    [MRS spring meating 2009. San Francisco, CA (US), 13.04.2009-17.04.2009]
    Grant CEP: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: Raman spectroscopy * silicon thin films * photovoltaics
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    http://www.mrs.org/s_mrs/sec_subscribe.asp?TrackID=FVBMVC5NCPA3LSSGPWPGMZURP3UMFBBT&CID=18437&DID=243429

    Series of Raman spectra were measured for microcrystalline silicon thin film with variable crystallinity. Five sets of Raman spectra (corresponding to excitations at 325 nm, 442 nm, 514.5 nm, 632.8 nm and 785 nm wavelengths) were subjected to factor analysis which showed that each set of spectra consisted of just two independent spectral components. Decomposition of the measured Raman spectra into the amorphous and the microcrystalline components is illustrated for 514.5 nm and 632.8 nm excitations. Effect of the light scattering on absolute intensity of Raman spectra was identified even for excitation wavelength highly absorbed in the mixed phase silicon layers.
    Trvalý link: http://hdl.handle.net/11104/0183023