Počet záznamů: 1

LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition

  1. 1.
    0336628 - FZU-D 2010 RIV CH eng J - Článek v odborném periodiku
    Stuchlík, Jiří - Ledinský, Martin - Honda, Shinya - Drbohlav, Ivo - Mates, Tomáš - Fejfar, Antonín - Hruška, Karel - Stuchlíková, The-Ha - Kočka, Jan
    LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition.
    Thin Solid Films. Roč. 517, č. 24 (2009), s. 6829-6832 ISSN 0040-6090
    Grant CEP: GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠk LC510; GA AV ČR IAA1010413
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: amorphous hydrogenated silicon * atomic force microscopy * plasma-enhanced chemical vapour deposition, * nucleation * Raman scattering * lithium fluoride
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.727, rok: 2009

    Lithium fluoride (Lif) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions.
    Trvalý link: http://hdl.handle.net/11104/0180823