Počet záznamů: 1

Secondary electron contrast in doped semiconductor with presence of a surface ad-layer

  1. 1.
    0335263 - UPT-D 2010 RIV AT eng C - Konferenční příspěvek (zahraniční konf.)
    Mika, Filip - Hovorka, Miloš - Frank, Luděk
    Secondary electron contrast in doped semiconductor with presence of a surface ad-layer.
    MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 1: 199-200. ISBN 978-3-85125-062-6.
    [MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
    Grant CEP: GA ČR GP102/09/P543; GA AV ČR IAA100650803
    Výzkumný záměr: CEZ:AV0Z20650511
    Klíčová slova: dopant contrast * secondary electrons * semiconductor
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
    http://www.univie.ac.at/asem/Graz_MC_09/papers/51426.pdf http://www.univie.ac.at/asem/Graz_MC_09/papers/51426.pdf

    The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface.
    Trvalý link: http://hdl.handle.net/11104/0179773