Počet záznamů: 1

Stacking Faults and Dislocation Dissociation in MoSi2

  1. 1.
    0326002 - UFM-A 2010 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
    Čák, Miroslav - Šob, Mojmír - Paidar, Václav - Vítek, V.
    Stacking Faults and Dislocation Dissociation in MoSi2.
    Advanced Intermetallic-Based Alloys for Extreme Environment and Energy Applications. Warrendale, PA: Materials Research Society, 2009 - (Palm, M.; Bewlay, B.; Takeyama, M.; Wiezorek, J.; He, Y.), s. 437-442. MRS Symposium Proceedings, vol. 1128. ISBN 978-1-60511-100-1.
    [2008 Fall Meeting of the Materials Research Society: Symposium on Advanced Intermetallic-Based Alloys for Extreme Environment and Energy Applications. Boston (US), 01.12.2008-05.12.2008]
    Grant CEP: GA AV ČR IAA100100920
    Výzkumný záměr: CEZ:AV0Z20410507; CEZ:AV0Z10100520
    Klíčová slova: stacking faults * dislocation dissociation * molybdenum disilicide
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

    We present the gamma-surfaces for the (013) and (110) planes calculated by employing the density functional based method as implemented in the VASP code. While there is only one minimum on the (110) gamma-surface, three distinct minima have been found on the (013) gamma-surface. These minima, which determine three types of possible stacking faults on the (013) plane, are not symmetry dictated and thus the fault vectors are to a great extent controlled by the details of the interatomic bonding in MoSi2.
    Trvalý link: http://hdl.handle.net/11104/0173250