Laser-induced crystallization of anodic TiO.sub.2./sub. nanotube layers

0533549 - FZÚ 2021 RIV GB eng J - Článek v odborném periodiku
Sopha, H. - Mirza, M. Inam - Turčičová, Hana - Pavliňák, D. - Michalička, J. - Krbal, M. - Rodriguez-Pereira, J. - Hromádko, L. - Novák, Ondřej - Mužík, Jiří - Smrž, Martin - Kolíbalová, E. - Goodfriend, Nathan - Bulgakova, Nadezhda M. - Mocek, Tomáš - Macák, J. M.
Laser-induced crystallization of anodic TiO₂ nanotube layers.
RSC Advances. Roč. 10, č. 37 (2020), s. 22137-22145. E-ISSN 2046-2069
Grant CEP: GA MŠMT EF15_003/0000445; GA MŠMT EF15_006/0000674; GA MŠMT LO1602; GA MŠMT LM2015086
Grant ostatní: OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445; OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674
Institucionální podpora: RVO:68378271
Klíčová slova: crystallization * TiO₂ * nanotube * TNT * X-ray diffraction * HRTEM
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 3.361, rok: 2020
Způsob publikování: Open access

In this study, crystallization of amorphous TiO2 nanotube (TNT) layers upon optimized laser annealing is shown. The resulting anatase TNT layers do not show any signs of deformation or melting. The crystallinity of the laser annealed TNT layers was investigated using X-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The study of the (photo-) electrochemical properties showed that the laser annealed TNT layers were more defective than conventional TNT layers annealed in a muffle oven at 400 C, resulting in a higher charge recombination rate and lower photocurrent response. However, a lower overpotential for hydrogen evolution reaction was observed for the laser annealed TNT layer compared to the oven annealed TNT layer.
Trvalý link: http://hdl.handle.net/11104/0311915