Výsledky vyhledávání
- 1.0568245 - FZÚ 2023 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Stuchlík, Jiří - Babčenko, Oleg - Remeš, Zdeněk - Čermák, Jan - Kromka, Alexander - Pham, T.T. - Pham, M.T. - Stuchlíková, The-Ha
Diamond thin films for PV solar cells on the base of a-SiC:H alloy.
Proceedings of the International Conference on Green Technology and Sustainable Development (GTSD2022). New York: IEEE, 2022, s. 982-985. ISBN 978-166546628-8.
[International Conference on Green Technology and Sustainable Development (GTSD)/6./. Nha Trang City (VN), 29.07.2022-30.07.2022]
Grant CEP: GA MŠMT LM2018110; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: polycrystalline diamond * metal unordered network * a-SiC:H * J-V characteristics * photovoltaics
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://ieeexplore.ieee.org/document/9989037
Trvalý link: https://hdl.handle.net/11104/0339580 - 2.0540385 - FZÚ 2021 RIV HU eng A - Abstrakt
Stuchlíková, The-Ha - Čermák, Jan - Babčenko, Oleg - Remeš, Zdeněk - Kromka, Alexander - Stuchlík, Jiří
ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C.
Book of Abstracts of the 18th International Conference on Thin Films & 18th Joint Vacuum Conference. Budapest, 2020 - (Pécz, B.). s. 149-149
[18th International Conference on Thin Films & 18th Joint Vacuum Conference. 22.11.2020-26.11.2020, Budapest]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: ZnO * diamond thin films * a-SiC:H * thin film diodes
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://akcongress.com/ictf-jvc/
Trvalý link: http://hdl.handle.net/11104/0318010 - 3.0536230 - FZÚ 2021 RIV DE eng J - Článek v odborném periodiku
Stuchlíková, The-Ha - Stuchlík, Jiří - Remeš, Zdeněk - Taylor, Andrew - Mortet, Vincent - Ashcheulov, Petr - Gregora, Ivan - Krivyakin, G. - Volodin, V.
High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films.
Physica Status Solidi B. Roč. 257, č. 6 (2020), s. 1-6, č. článku 1900247. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: a-SiC:H * boron-doped diamond * fluorine-doped tin oxide * I-V characteristics * PIN diodes * BDD * FTO
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.710, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1002/pssb.201900247
Trvalý link: http://hdl.handle.net/11104/0314043 - 4.0521781 - FZÚ 2020 RIV SK eng A - Abstrakt
Remeš, Zdeněk - Chang, Yu-Ying - Stuchlíková, The-Ha - Stuchlík, Jiří - Shu, H.H.
Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO.
Book of Abstracts of the 29th Joint Seminar of the Development of Materials Science in Research and Education (DMS – RE 2019). Bratislava: STU Bratislava, 2019 - (Behúlová, M.; Kožíšek, Z.; Papánková, B.). s. 41-41. ISBN 978-80-8208-019-6.
[29th Joint Seminar Development of Materials Science in Research and Education (DMS-RE2019). 02.09.2019-06.09.2019, Nová Lesná]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: ZnO * a-SiC:H
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0306347