Výsledky vyhledávání
- 1.0568265 - FZÚ 2023 RIV DE eng A - Abstrakt
Hospodková, Alice - Čížek, J. - Hájek, František - Hubáček, Tomáš - Dominec, Filip - Kuldová, Karla - Liedke, M.O. - Butterling, M. - Wagner, A.
Formation of Ga vacancies in MOVPE prepared GaN layers.
Abstract book of the International Conference on Metalorganic Vapor Phase Epitaxy /20./ - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 28-28
[International Conference on Metalorganic Vapor Phase Epitaxy ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaN * vacancies * positron annihilation spectroscopy
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: https://hdl.handle.net/11104/0339595 - 2.0568264 - FZÚ 2023 RIV DE eng A - Abstrakt
Batysta, Jan - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Kuldová, Karla
Compensation of strain in InGaN/GaN QWs by AlGaN layer.
Abstract book of the International Conference on Metalorganic Vapor Phase Epitaxy /20./ - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 200-200
[International Conference on Metalorganic Vapor Phase Epitaxy ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
Grant CEP: GA TA ČR(CZ) FW03010298
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * InGaN/GaN * quantum wells * strain
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: https://hdl.handle.net/11104/0339593 - 3.0567935 - FZÚ 2023 RIV PL eng A - Abstrakt
Hospodková, Alice - Čížek, J. - Hájek, František - Hubáček, Tomáš - Dominec, Filip - Kuldová, Karla - Liedke, M.O. - Butterling, M. - Wagner, A.
Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects.
PCCG 2022, Polish Conference on Crystal Growth 2022 - Book of Abstracts. Gdańsk: Gdańsk University of Technology, 2022 - (Klimczuk, T.). s. 23-23
[Polish Conference on Crystal Growth 2022 /PCCG 2022/. 19.06.2022-24.06.2022, Gdańsk]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaN * defects * vacancies
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://event.mostwiedzy.pl/event/2/attachments/52/145/PCCG_Abstract_book_updated.pdf
Trvalý link: https://hdl.handle.net/11104/0339197 - 4.0560116 - FZÚ 2023 RIV DE eng A - Abstrakt
Hubáček, Tomáš - Kuldová, Karla - Gedeonová, Zuzana - Hájek, František - Hubík, Pavel - Pangrác, Jiří - Oswald, Jiří - Hospodková, Alice
Effect of MOVPE growth conditions on germanium doped (In)GaN layers.
Book of Abstracts of the 20th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 208-208
[International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
Grant CEP: GA MŠMT(CZ) LTAIN19163
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaN * InGaN
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: https://hdl.handle.net/11104/0333147 - 5.0520830 - FZÚ 2020 RIV US eng A - Abstrakt
Vaněk, Tomáš - Hubáček, Tomáš - Hájek, František - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Slavická Zíková, Markéta - Kretková, Tereza - Dominec, Filip - Hospodková, Alice
Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits.
Book of Abstracts of the International Conference on Crystal Growth and Epitaxy - ICCGE /19./. CTI Meeting Technology, 2019. ISBN 9780463615836.
[International Conference on Crystal Growth and Epitaxy - ICCGE /19./. 28.07.2019-02.08.2019, Keystone]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * InGaN * quantum well * photoluminescence * cathodoluminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0305492 - 6.0501495 - FZÚ 2019 JP eng A - Abstrakt
Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293517 - 7.0501493 - FZÚ 2019 JP eng A - Abstrakt
Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Dominec, Filip - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by barrier growth.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 131-132
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR(CZ) GA16-11769S
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: quantum well * InGaN * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293516 - 8.0501482 - FZÚ 2019 JP eng A - Abstrakt
Zíková, Markéta - Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hájek, František
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 83-83
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: low dimensional structures * InGaN/GaN quantum wells * MOVPE * luminescent defect band
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293514 - 9.0496860 - FZÚ 2019 CZ eng A - Abstrakt
Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hývl, Matěj - Zíková, Markéta - Hulicius, Eduard
Role of V-pits in the InGaN/GaN multiple quantum well structures.
NANOCON 2017 - Book of Abstracts. Ostrava: Tanger Ltd, 2017 - (Shrbená, J.). s. 81-81. ISBN 978-80-87294-78-9.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. 18.10.2017-20.10.2017, Brno]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN heterostructure * scintillators * photoluminescence * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289480 - 10.0496205 - FZÚ 2019 RIV PL eng A - Abstrakt
Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hájek, František - Vaněk, Tomáš - Jarý, Vítězslav
Design of InGaN/GaN MQW structure for scintillator applications.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 256-256.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA ČR GA16-11769S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * MQW structure * scintillator
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289031