Výsledky vyhledávání
- 1.0521934 - FZÚ 2020 RIV PL eng A - Abstrakt
Král, Robert - Vaněček, Vojtěch - Salomoni, M. - Páterek, Juraj - Babin, Vladimir - Kodama, S. - Kurosawa, S. - Yokota, Y. - Auffray, E. - Yoshikawa, A. - Nikl, Martin
Crystal growth of cesium hafnium chloride by Bridgman method, its stability and luminescence and scintillation properties.
Book of Abstracts of the German Polish Conference on Crystal Growth (GPCCG3) /3./. Poznaň: Poznan University of Technology, 2019 - (Kasprowicz, D.; Miller, W.). s. 72-72. ISBN 978-83-936586-3-3.
[German Polish Conference on Crystal Growth (GPCCG3) /3./. 17.03.2019-21.03.2019, Poznaň]
Grant CEP: GA ČR GJ18-17555Y
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: cesium hafnium chloride * Bridgman method * hygroscopicity * crystal growth * scinitillator
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0306481 - 2.0501495 - FZÚ 2019 JP eng A - Abstrakt
Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293517 - 3.0501493 - FZÚ 2019 JP eng A - Abstrakt
Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Dominec, Filip - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by barrier growth.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 131-132
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR(CZ) GA16-11769S
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: quantum well * InGaN * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293516 - 4.0496160 - FZÚ 2019 RIV PL eng A - Abstrakt
Hájek, František - Zíková, Markéta - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří
Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 125-125.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * quantum wells * doping * luminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0288966