Výsledky vyhledávání
- 1.0522613 - FZÚ 2020 FR eng A - Abstrakt
Sykorová, S. - Páterek, Juraj - Pokorný, M. - Kučerková, Romana - Houžvička, J. - Nikl, Martin - Válková, S.
Luminescence, scintillation and energy transfer in the doubly doped LuAG:Pr,Dy single crystal.
SCINT 2017 - 14th International Conference on Scintillating Materials and their Applications. Chamonix: CERN, 2017. s. 94-94.
[SCINT 2017. International Conference on Stintillating Materials and their Applications /14./. 18.09.2017-22.09.2017, Chamonix]
Grant CEP: GA ČR GA16-15569S
GRANT EU: European Commission(XE) 644260 - INTELUM
Institucionální podpora: RVO:68378271
Klíčová slova: luminescence * scintillation and energy transfer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://indico.cern.ch/event/388511/contributions/2612863/
Trvalý link: http://hdl.handle.net/11104/0307079 - 2.0521924 - FZÚ 2020 RIV PL eng A - Abstrakt
Páterek, Juraj - Pokorný, Martin - Valková, S. - Sýkorová, S. - Touš, J. - Houžvička, J. - Nikl, Martin
YAG:Ce codoped with Ho3+ and Er3+:energy transfer and acceleration of Ce3+ decay.
The 2018 Europhysical Conference on Defects in Insulating Materials - Book of Abstracts. Bydgoszcz: University of Bydgoszcz, 2018. s. 123-123.
[Europhysical Conference on Defects in Insulating Materials (EURODIM 2018). 08.07.2018-13.07.2018, Bydgoszcz]
Grant CEP: GA MŠMT EF16_013/0001406; GA ČR GA16-15569S
GRANT EU: European Commission(XE) 644260 - INTELUM
Grant ostatní: OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
Institucionální podpora: RVO:68378271
Klíčová slova: energy transfer * radiation detection * photoluminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
http://eurodim2018.pl/conf-data/eurodim2018/files/EURODIM%202018-book%20of%20abstracts.pdf
Trvalý link: http://hdl.handle.net/11104/0306478 - 3.0521774 - FZÚ 2020 RIV CZ eng A - Abstrakt
Páterek, Juraj - Pejchal, Jan - Nikl, Martin
LuAG:Pr codoped with Ho3+: acceleration of Pr3+ decay by energy transfer.
10th International Conference on Luminescent Detectors and Transformers of Ionizing Radiation. Book of Abstracts. Praha: Czech Technical University in Prague, 2018. s. 65-65. ISBN 978-80-01-06479-5.
[International Conference on Luminescent Detectors and Transformers of Ionizing Radiation /10./. 09.09.2018-14.09.2018, Praha]
Grant CEP: GA ČR GA16-15569S
GRANT EU: European Commission(XE) 644260 - INTELUM
Institucionální podpora: RVO:68378271
Klíčová slova: energy transfer * LuAG scintilator
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0306339 - 4.0501495 - FZÚ 2019 JP eng A - Abstrakt
Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293517 - 5.0496211 - FZÚ 2019 RIV PL eng A - Abstrakt
Dominec, Filip - Kuldová, Karla - Zíková, Markéta - Pangrác, Jiří - Hospodková, Alice
Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 153-153.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * QW * Buffer layer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289034 - 6.0496190 - FZÚ 2019 RIV PL eng A - Abstrakt
Hubáček, Tomáš - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 155-155.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN * QW capping * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289016 - 7.0496184 - FZÚ 2019 RIV PL eng A - Abstrakt
Vaněk, Tomáš - Hospodková, Alice - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Zíková, Markéta - Vetushka, Aliaksi
Increasing scintillator active region thickness by InGaN/GaN QW number.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 151-151.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * QW number
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289013 - 8.0464451 - FZÚ 2017 RIV ZA eng A - Abstrakt
Hulicius, Eduard - Hospodková, Alice - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Pangrác, Jiří - Brůža, P. - Pánek, D.
Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications.
SMEOS 2016 - Sensors, MEMS and Electro-Optical Systems /4./.Abstracts. Skukuza: SPIE, 2016 - (Schutte, C.). s. 13-13
[SMEOS 2016 - Sensors, MEMS and Electro-Optical Systems /4./. 12.09.2016-14.09.2016, Skukuza]
Grant CEP: GA ČR GA16-11769S; GA MŠMT LM2015087; GA MŠMT LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN QWs * yellow luminescence * photoluminescence * radioluminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0263309