Výsledky vyhledávání
- 1.0501534 - FZÚ 2019 GR eng A2 - Abstrakt ze sborníku
Dominec, Filip - Kretková, Tereza - Kuldová, Karla - Hájek, František - Horešovský, Robert - Komninou, P. (ed.) - Hospodková, Alice
Cathodoluminescence of v-pits in InGaN/GaN heterostructure: dependence on QW number and electron penetration depth.
Proceedings of the International Conference on Extended Defects in Semiconductors /19./. Thessaloniki: Aristotle University of Thessaloniki, 2018. P-2-P-2. ISSN N.
[International Conference on Extended Defects in Semiconductors /19./ EDS2018. 24.06.2018-29.06.2018, Thessaloniki]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293552 - 2.0501501 - FZÚ 2019 GR eng A2 - Abstrakt ze sborníku
Kretková, Tereza - Dominec, Filip - Kuldová, Karla - Hájek, František - Novotný, Radek - Hospodková, Alice
Impact of dust contamination on epitaxial growth morphology, cathodoluminescence and photoluminescence.
Proceedings of the International Conference on Extended Defects in Semiconductors /19./. Thessaloniki: Aristotle University of Thessaloniki, 2018. P-11-P-11. ISSN N.
[International Conference on Extended Defects in Semiconductors /19./ EDS2018. 24.06.2018-29.06.2018, Thessaloniki]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293553