Výsledky vyhledávání
- 1.0486782 - ÚFE 2018 CZ eng A - Abstrakt
Baravets, Yauhen - Honzátko, Pavel - Todorov, Filip - Gladkov, Petar
Comparison of tunable narrow-band CW mid-IR generators based on the difference frequency
generation in KTP and KTA crystals.
SMMO2015 COST Action MP1204 Conference. Book of Abstracts. Praha: Institute of Photonics and Electronics of CAS, 2015 - (Todorov, F.). s. 35. ISBN 978-80-86269-23-8.
[SMMO2015 COST Action MP1204 Conference. 08.04.2015-11.04.2015, Praha]
Grant ostatní: COST(XE) MP1204
Institucionální podpora: RVO:67985882
Klíčová slova: mid-IR generators * KTP * KTA crystals
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0281504 - 2.0433687 - FZÚ 2015 CH eng A - Abstrakt
Vyskočil, Jan - Gladkov, Petar - Petříček, Otto - Hospodková, Alice - Pangrác, Jiří
Growth and properties of AIII BV QD structures for intermediate band solar cells.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
Grant CEP: GA ČR(CZ) GP14-21285P
Institucionální podpora: RVO:68378271 ; RVO:67985882
Klíčová slova: metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * solar cells
Trvalý link: http://hdl.handle.net/11104/0237896 - 3.0398725 - FZÚ 2014 CZ eng A - Abstrakt
Hulicius, Eduard - Komninou, Ph. - Gladkov, Petar - Karakostas, Th. - Pangrác, Jiří
Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates.
NANOCON 2013. 5th International Conference Proceedings. Ostrava: TANGER Ltd, 2013. s. 75-75. ISBN 978-80-87294-44-4.
[NANOCON 2013. International Conference /5./. 16.10.2013-18.10.2013, Brno]
Grant CEP: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271 ; RVO:67985882
Klíčová slova: InAs/GaAs heterostructures * MOVPE * structural properties * TEM characterization * PL characterization
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0226162 - 4.0395954 - FZÚ 2014 US eng A - Abstrakt
Gladkov, Petar - Paskova, T. - Hulicius, Eduard - Preble, E. - Evans, K.R.
Low-defect-density bulk semi-insulating GaN:Fe: optical characterization as a tool for nondestructive doping assessment.
Proceedings of the 9th International Conference on Nitride Semiconductors (ICNS 9). Warrendale: MRS, 2011. s. 85.
[International Conference on Nitride Semiconductors /9./ (ICNS 9). 10.07.2011-15.07.2011, Glasgow]
Grant ostatní: US Missile Defense AgencyUSA(US) HQ0147-09-C-0005
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: GaN * otical absorption * Fe-doping
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0223854 - 5.0373032 - FZÚ 2012 US eng A - Abstrakt
Gladkov, Petar - Humlíček, J. - Hulicius, Eduard - Šimeček, Tomislav - Paskova, T. - Evans, K.
Effect of Fe doping on transmission and photoluminescence properties of semiinsulating HVPE GaN:Fe bulk like material.
The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy. 2009 Abstract Book. Warren: American Association for Crystal Growth, 2009. s. 151. ISBN N.
[US Biennial Workshop on Organometallic Vapor Phase Epitaxy /14./. 09.08.2009-14.08.2009, Lake Geneva, Wisconsin]
Grant ostatní: MDA(US) HQ0147-09-C-0005
Výzkumný záměr: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Klíčová slova: GaN templates * HVPE
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0006871 - 6.0303324 - URE-Y 980129 CZ eng A - Abstrakt
Nohavica, Dušan - Gladkov, Petar - Žďánský, Karel
Preparation and properties of thick GaInP(As)/GaAs layers for optoelecronic applications.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 22
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant CEP: GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Klíčová slova: gallium compounds * epitaxial growth * photoluminescence * Hall effect
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0113570 - 7.0303322 - URE-Y 980128 CZ eng A - Abstrakt
Gladkov, Petar - Weber, J.
Low temperature photoluminescence properties of p and n-type AlxGa(1-x)As for x>0.42.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 26
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant ostatní: AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Klíčová slova: gallium compounds * photoluminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0113568 - 8.0302943 - URE-Y 960076 CZ eng A - Abstrakt
Gladkov, Petar - Žďánský, Karel
Photoluminescence band in p-type Al0.67Ga0.33As related to nonequilibrium DX- centres.
Praha: Faculty of Mathematics and Physics Charles University, 1996. ICL'96 Conference Handbook. - (Hála, J.). s. 3/19
[1996 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter -ICL'96. 18.08.1996-23.08.1996, Prague]
Grant CEP: GA AV ČR(CZ) IAA167108
Klíčová slova: photoluminescence * III-V semiconductors
Trvalý link: http://hdl.handle.net/11104/0113232 - 9.0105968 - URE-Y 20040147 RU eng A - Abstrakt
Vaňková, V. - Gladkov, Petar - Botha, J. R.
Radiative recombinations in MOVPE-grown InAs1-x Sbx
6th International Conference on Mid-Infrared Optoelectronics Materials and Devices - MIOMD-VI. Book of Abstracts. [St. Petersburg]: [IOFFE Institute], 2004. s. 134.
[MIOMD /6./. 28.06.2004-02.07.2004, St. Petersburg]
Grant CEP: GA AV ČR(CZ) KSK1010104
Klíčová slova: semiconductors * photoluminescence
Kód oboru RIV: JB - Senzory, čidla, měření a regulace
Trvalý link: http://hdl.handle.net/11104/0013153 - 10.0105938 - URE-Y 20040146 FR eng A - Abstrakt
Vaňková, V. - Gladkov, Petar - Botha, J. R.
Photoluminescence of MOVPE-grown InAs and InAs1-x Sbx: A systematic study.
ICCG-14 and ICVG-12. Abstracts of the 14th International Conference on Crystal Growth in conjuction with the 12th International Conference on Vapor Growth and Epitaxy. [Grenoble]: [Groupe Francais de Croissance Cristalline], 2004. s. 139.
[ICCG /14./ and ICVG /12./. 09.08.2004-13.08.2004, Grenoble]
Grant CEP: GA AV ČR(CZ) KSK1010104
Klíčová slova: semiconductors * photoluminescence
Kód oboru RIV: JB - Senzory, čidla, měření a regulace
Trvalý link: http://hdl.handle.net/11104/0013126