Výsledky vyhledávání
- 1.0570907 - FZÚ 2024 RIV CZ eng A - Abstrakt
Hulicius, Eduard - Vaněk, Tomáš - Hospodková, Alice - Blažek, K.
Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO.
NANOCON 2022 - Book of Abstracts. Ostrava: Tanger Ltd, 2022 - (Zbořil, R.; Váňová, J.). s. 25-25. ISBN 978-80-88365-07-5.
[International Conference on Nanomaterials - Research & Application /14./ NANOCON. 19.10.2022-21.10.2022, Brno]
Grant CEP: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * quantum wells * scintillator
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: https://hdl.handle.net/11104/0342237 - 2.0539244 - FZÚ 2021 RIV CZ eng A - Abstrakt
Hulicius, Eduard - Dominec, Filip - Hospodková, Alice - Pangrác, Jiří - Bábor, P.
SIMS studies of MOVPE GaN/InGaN scintilator nano-structures.
Proceedings of Abstracts - Nanocon 2019. Ostrava: Tanger Ltd., 2019 - (Shrbená-Váňová, J.). s. 81-81. ISBN 978-80-87294-94-9.
[Nanocon 2019 International Conference on Nanomaterials - Research & Application /11./. 16.10.2019-18.10.2019, Brno]
Grant CEP: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: SIMS * InGaN/GaN heterostructure * scintillators * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0316917 - 3.0501495 - FZÚ 2019 JP eng A - Abstrakt
Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293517 - 4.0496860 - FZÚ 2019 CZ eng A - Abstrakt
Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hývl, Matěj - Zíková, Markéta - Hulicius, Eduard
Role of V-pits in the InGaN/GaN multiple quantum well structures.
NANOCON 2017 - Book of Abstracts. Ostrava: Tanger Ltd, 2017 - (Shrbená, J.). s. 81-81. ISBN 978-80-87294-78-9.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. 18.10.2017-20.10.2017, Brno]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN heterostructure * scintillators * photoluminescence * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289480 - 5.0496195 - FZÚ 2019 RIV PL eng A - Abstrakt
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 156-156.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * quantum wells * scintillator * low temperature buffer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289021 - 6.0496190 - FZÚ 2019 RIV PL eng A - Abstrakt
Hubáček, Tomáš - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 155-155.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN * QW capping * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289016 - 7.0479022 - FZÚ 2018 SK eng A - Abstrakt
Hulicius, Eduard - Gregušová, D. - Pohorelec, O. - Stoklas, R. - Hospodková, Alice - Pangrác, Jiří - Novák, J. - Heuken, M.
Preparation and measurement of GaN based HEMT structures.
Zborník abstraktov. 19. konferencia slovenských a českých fyzikov. Zvolen: Slovenská fyzikálna společnost´, 2017.
[Konferencia slovenských a českých fyzikov /19./. 04.09.2017-07.09.2017, Prešov]
Grant ostatní: AV ČR(CZ) SAV-16-21
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * HEMT * GaN * AlGaN
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0275072 - 8.0466110 - FZÚ 2017 US eng A - Abstrakt
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016. s. 75
Grant CEP: GA MŠMT LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InAs * GaAsSb * InGaAs * quantum dot * strain reducing layer * MOVPE
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0264510 - 9.0466101 - FZÚ 2017 US eng A - Abstrakt
Hulicius, Eduard - Pangrác, Jiří - Hospodková, Alice - Mikhailova, M. P. - Veinger, A.I. - Kochman, I.V. - Semenikhin, P.V. - Kalinina, K.V. - Parfeniev, R.V. - Berezovets, V.A.
Shubnikov-de Haas oscillations and microwave radiation absorption of MOVPE grown InAs/GaSb/AlSb deep quantum wells.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016. s. 75
Grant CEP: GA ČR(CZ) GP14-21285P; GA ČR GA16-11769S; GA MŠMT LO1603; GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0264504 - 10.0466021 - FZÚ 2017 US eng A - Abstrakt
Vyskočil, Jan - Hospodková, Alice - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto - Hulicius, Eduard
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016 - (Biefeld, R.). s. 44-44
Grant CEP: GA ČR(CZ) GP14-21285P
Institucionální podpora: RVO:68378271
Klíčová slova: InAs * GaAsSb * InGaAs * quantum dot * solar cells
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0264476