Výsledky vyhledávání
- 1.0496211 - FZÚ 2019 RIV PL eng A - Abstrakt
Dominec, Filip - Kuldová, Karla - Zíková, Markéta - Pangrác, Jiří - Hospodková, Alice
Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 153-153.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * QW * Buffer layer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289034 - 2.0496205 - FZÚ 2019 RIV PL eng A - Abstrakt
Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hájek, František - Vaněk, Tomáš - Jarý, Vítězslav
Design of InGaN/GaN MQW structure for scintillator applications.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 256-256.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA ČR GA16-11769S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * MQW structure * scintillator
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289031 - 3.0496201 - FZÚ 2019 PL eng A - Abstrakt
Stránská Matějová, J. - Horák, L. - Minárik, P. - Holý, V. - Hospodková, Alice - Grzanka, E. - Domagala, J. - Leszczynski, M.
Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects: XRD experiments and numerical simulations.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 181-181.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * V-pit defects * XRD * epilayers
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289027 - 4.0496195 - FZÚ 2019 RIV PL eng A - Abstrakt
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 156-156.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * quantum wells * scintillator * low temperature buffer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289021 - 5.0496190 - FZÚ 2019 RIV PL eng A - Abstrakt
Hubáček, Tomáš - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 155-155.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN * QW capping * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289016 - 6.0496184 - FZÚ 2019 RIV PL eng A - Abstrakt
Vaněk, Tomáš - Hospodková, Alice - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Zíková, Markéta - Vetushka, Aliaksi
Increasing scintillator active region thickness by InGaN/GaN QW number.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 151-151.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * QW number
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289013 - 7.0496161 - FZÚ 2019 RIV PL eng A - Abstrakt
Kuldová, Karla - Kretková, Tereza - Novotný, Radek - Dominec, Filip - Hájek, František - Pangrác, Jiří - Hospodková, Alice
Effect of dust contamination on GaN/InGaN multiple quantum well growth morphology.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 152-152.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * EDX * cathodoluminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0288967 - 8.0496160 - FZÚ 2019 RIV PL eng A - Abstrakt
Hájek, František - Zíková, Markéta - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří
Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 125-125.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * quantum wells * doping * luminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0288966