Výsledky vyhledávání
- 1.0303823 - URE-Y 20010058 IT eng A - Abstrakt
Žďánský, Karel - Procházková, Olga - Zavadil, Jiří - Novotný, Jan
P-type InP grown by LPE from melts with rare earth admixtures.
[Parma]: [Instituto CNRMASPEC], 2001. DRIP IX - 9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Program and abstracts. s. 36
[DRIP /9./. 24.09.2001-28.09.2001, Rimini]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010104 Projekt 04/01:4044
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth metals * semiconductor materials
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Trvalý link: http://hdl.handle.net/11104/0114007 - 2.0303711 - URE-Y 20000154 CZ eng A - Abstrakt
Novotný, Jan - Mička, Z. - Prokopová, Lucie
Growth of nonpolar 001 sector of TGS single crystals with metal impurities.
Praha: MAXDORF, 2000. ISBN 80-85912-37-6. Development of Materials Science in Research and Education. Abstracts of the 10th Joint Seminar. - (Nitsch, K.; Rodová, M.). s. 23
[Development of Materials Science in Research and Education - DMS-RE 2000 /10./. 05.09.2000-07.09.2000, Zlenice]
Grant CEP: GA ČR GA102/99/0364
Grant ostatní: AV ČR(CZ) KSK1010601 Projekt 7/96/K:4076
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: crystal growth * ferroelectricity
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Trvalý link: http://hdl.handle.net/11104/0113898 - 3.0303662 - URE-Y 20000096 CZ eng A - Abstrakt
Zavadil, Jiří - Žďánský, Karel - Procházková, Olga - Novotný, Jan
Electro-optical properties of InP epitaxial layers grown with rare-earth admixture.
Praha: Jednota československých matematiků a fyziků, 2000. ISBN 80-7015-720-8. Sborník příspěvků ze semináře OS Polovodiče FVS JČMF. - (Hulicius, E.; Humlíček, J.; Velický, B.). s. 49-50
[Liblice 2000. 31.01.2000-02.02.2000, Liblice]
Grant CEP: GA ČR GA102/99/0341
Grant ostatní: AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: semiconductors * photoluminescence * rare earth compounds
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Trvalý link: http://hdl.handle.net/11104/0113850 - 4.0303317 - URE-Y 980075 CZ eng A - Abstrakt
Novotný, Jan
Incoherent light sources for optical communications.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 2
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: light emitting diodes * liquid phase epitaxial growth * optical communication
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113563 - 5.0303316 - URE-Y 980074 CZ eng A - Abstrakt
Novotný, Jan - Procházková, Olga - Žďánský, Karel - Zavadil, Jiří - Pekárek, Ladislav - Šrobár, Fedor
Preparation and properties of rare-earth InP-based semiconductor compounds.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 4
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: liquid phase epitaxial growth * rare earth compounds * photoluminescence * electroluminescent devices
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113562 - 6.0303269 - URE-Y 980072 CZ eng A - Abstrakt
Procházková, Olga - Novotný, Jan - Zavadil, Jiří - Žďánský, Karel
Study of the influence of some F-elements on the properties of InP semiconductor layers prepared by LPE.
Praha: MAXDORF, 1998. ISBN 80-85800-91-8. Development of Materials Science in Research and Education. Abstracts of the 8th joint seminar. - (Nitsch, K.; Rodová, M.). s. 37
[Development of Materials Science in Research and Education - DMS-RE 1998 /8./. 08.09.1998-10.09.1998, Zlenice]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: semiconductors * rare earth compounds * crystal defects
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113515 - 7.0303268 - URE-Y 980059 CZ eng A - Abstrakt
Novotný, Jan
The role of surface and volume duffusion in the growth of GaAlAs thin layers.
Praha: MAXDORF, 1998. ISBN 80-85800-91-8. Development of Materials Science in Research and Education. Abstracts of the 8th joint seminar. - (Nitsch, K.; Rodová, M.). s. 2
[Development of Materials Science in Research and Education - DMS-RE 1998 /8./. 08.09.1998-10.09.1998, Zlenice]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: liquid phase epitaxial growth * diffusion * semiconductors
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113514 - 8.0303253 - URE-Y 980098 GB eng A - Abstrakt
Novotný, Jan - Procházková, Olga - Žďánský, Karel - Zavadil, Jiří - Šrobár, Fedor
Preparation and characterization of n- and p-type ytterbium doped InP epitaxial layers.
Cardiff: Cardiff University, 1998. EXMATEC'98. Conference programme, abstracts & exhibition guide. s. -
[International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies /4./. 21.06.1998-24.06.1998, Cardiff]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: semiconductors * rare earth compounds * crystal defects * liquid phase epitaxial growth
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113499 - 9.0303236 - URE-Y 980070 GB eng A - Abstrakt
Procházková, Olga - Novotný, Jan - Zavadil, Jiří - Žďánský, Karel
Effect of rare earth addition on liguid phase epitaxial InP and GaInAsP semiconductor layers.
Cardiff: Cardiff University, 1998. EXMATEC'98. Conference programme, abstracts & exhibition guide. s. -
[International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies /4./. 21.06.1998-24.06.1998, Cardiff]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: semiconductor materials * rare earth compounds * liquid phase epitaxial growth
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113482 - 10.0303074 - URE-Y 970098 SK eng A - Abstrakt
Procházková, Olga - Jelínek, František - Šaroch, Jaroslav - Novotný, Jan - Šrobár, Fedor
High frequency properties of InP and InGaAsP LPE layers prepared from melts containing rare earth elements.
[Bratislava]: [Institute of Electrical Engineering Slovak Academy of Sciences], 1997. HEAD'97. s. P6
[NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices /3./. 12.10.1997-16.10.1997, Smolenice]
Grant CEP: GA ČR 102/96/1238
Klíčová slova: semiconductors * rare earth compounds * epitaxial growth * measurement
Trvalý link: http://hdl.handle.net/11104/0113361