Výsledky vyhledávání
- 1.0303317 - URE-Y 980075 CZ eng A - Abstrakt
Novotný, Jan
Incoherent light sources for optical communications.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 2
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: light emitting diodes * liquid phase epitaxial growth * optical communication
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113563 - 2.0303316 - URE-Y 980074 CZ eng A - Abstrakt
Novotný, Jan - Procházková, Olga - Žďánský, Karel - Zavadil, Jiří - Pekárek, Ladislav - Šrobár, Fedor
Preparation and properties of rare-earth InP-based semiconductor compounds.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 4
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: liquid phase epitaxial growth * rare earth compounds * photoluminescence * electroluminescent devices
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113562 - 3.0303315 - URE-Y 980077 CZ eng A - Abstrakt
Zavadil, Jiří - Žďánský, Karel - Procházková, Olga
Electro-optical properties of InP and GaInAsP epitaxial layers grown with rare-earth admixture.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 5
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant CEP: GA ČR GA102/96/1238
Grant ostatní: AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Klíčová slova: photoluminescence * impurity states * electron mobility * rare earth compounds
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0113561 - 4.0303270 - URE-Y 980143 CZ eng A - Abstrakt
Nohavica, Dušan
Surface reconstruction in MO VPE grown GaAs.
Praha: MAXDORF, 1998. ISBN 80-85800-91-8. Development of Materials Science in Research and Education. Abstracts of the 8th joint seminar. - (Nitsch, K.; Rodová, M.). s. 4
[Development of Materials Science in Research and Education - DMS-RE 1998 /8./. 08.09.1998-10.09.1998, Zlenice]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: crystal growth * epitaxial layers * semiconductors
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113516 - 5.0303269 - URE-Y 980072 CZ eng A - Abstrakt
Procházková, Olga - Novotný, Jan - Zavadil, Jiří - Žďánský, Karel
Study of the influence of some F-elements on the properties of InP semiconductor layers prepared by LPE.
Praha: MAXDORF, 1998. ISBN 80-85800-91-8. Development of Materials Science in Research and Education. Abstracts of the 8th joint seminar. - (Nitsch, K.; Rodová, M.). s. 37
[Development of Materials Science in Research and Education - DMS-RE 1998 /8./. 08.09.1998-10.09.1998, Zlenice]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: semiconductors * rare earth compounds * crystal defects
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113515 - 6.0303268 - URE-Y 980059 CZ eng A - Abstrakt
Novotný, Jan
The role of surface and volume duffusion in the growth of GaAlAs thin layers.
Praha: MAXDORF, 1998. ISBN 80-85800-91-8. Development of Materials Science in Research and Education. Abstracts of the 8th joint seminar. - (Nitsch, K.; Rodová, M.). s. 2
[Development of Materials Science in Research and Education - DMS-RE 1998 /8./. 08.09.1998-10.09.1998, Zlenice]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: liquid phase epitaxial growth * diffusion * semiconductors
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113514 - 7.0303253 - URE-Y 980098 GB eng A - Abstrakt
Novotný, Jan - Procházková, Olga - Žďánský, Karel - Zavadil, Jiří - Šrobár, Fedor
Preparation and characterization of n- and p-type ytterbium doped InP epitaxial layers.
Cardiff: Cardiff University, 1998. EXMATEC'98. Conference programme, abstracts & exhibition guide. s. -
[International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies /4./. 21.06.1998-24.06.1998, Cardiff]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: semiconductors * rare earth compounds * crystal defects * liquid phase epitaxial growth
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113499 - 8.0303236 - URE-Y 980070 GB eng A - Abstrakt
Procházková, Olga - Novotný, Jan - Zavadil, Jiří - Žďánský, Karel
Effect of rare earth addition on liguid phase epitaxial InP and GaInAsP semiconductor layers.
Cardiff: Cardiff University, 1998. EXMATEC'98. Conference programme, abstracts & exhibition guide. s. -
[International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies /4./. 21.06.1998-24.06.1998, Cardiff]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: semiconductor materials * rare earth compounds * liquid phase epitaxial growth
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113482 - 9.0303213 - URE-Y 980065 CZ eng A - Abstrakt
Šrobár, Fedor
A diagrammatic method for analysis of GaAs and InP based optoelectronic devices.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 7
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant CEP: GA ČR GA102/96/1238
Klíčová slova: optoelectronic devices * nonlinear systems
Kód oboru RIV: CA - Anorganická chemie
Trvalý link: http://hdl.handle.net/11104/0113459