Vytisknout
0500632 - FZÚ 2019 RIV US eng J - Článek v odborném periodiku
Morales-Masis, M. - Rucavado, E. - Monnard, R. - Barraud, L. - Holovský, Jakub - Despeisse, M. - Boccard, M. - Ballif, C.
Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells.
IEEE Journal of Photovoltaics. Roč. 8, č. 5 (2018), s. 1202-1207. ISSN 2156-3381. E-ISSN 2156-3403
Grant CEP: GA ČR GA18-24268S
Institucionální podpora: RVO:68378271
Klíčová slova: electron mobility * heterojunctions * solar cells * silicon * transparent electrodes * wide band gap semiconductors * zirconium-doped indium oxide (IO:Zr)
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.398, rok: 2018
Trvalý link: http://hdl.handle.net/11104/0292711
Morales-Masis, M. - Rucavado, E. - Monnard, R. - Barraud, L. - Holovský, Jakub - Despeisse, M. - Boccard, M. - Ballif, C.
Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells.
IEEE Journal of Photovoltaics. Roč. 8, č. 5 (2018), s. 1202-1207. ISSN 2156-3381. E-ISSN 2156-3403
Grant CEP: GA ČR GA18-24268S
Institucionální podpora: RVO:68378271
Klíčová slova: electron mobility * heterojunctions * solar cells * silicon * transparent electrodes * wide band gap semiconductors * zirconium-doped indium oxide (IO:Zr)
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.398, rok: 2018
Trvalý link: http://hdl.handle.net/11104/0292711