Vytisknout
0496726 - ÚJF 2019 RIV US eng J - Článek v odborném periodiku
Mikšová, Romana - Macková, Anna - Jagerová, Adéla - Yatskiv, Roman
Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions.
Surface and Interface Analysis. Roč. 50, č. 11 (2018), s. 1243-1249. ISSN 0142-2421. E-ISSN 1096-9918.
[17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017). Monpellier, 24.09.2017-29.09.2017]
Grant CEP: GA ČR GA15-01602S; GA MŠMT EF16_013/0001812; GA MŠMT LM2015056
Institucionální podpora: RVO:61389005 ; RVO:67985882
Klíčová slova: ion irradiation of crystals * MC modelling of ion channeling * RBS channeling * SOI material
Obor OECD: Nuclear physics; Electrical and electronic engineering (URE-Y)
Impakt faktor: 1.319, rok: 2018
Trvalý link: http://hdl.handle.net/11104/0289379
Mikšová, Romana - Macková, Anna - Jagerová, Adéla - Yatskiv, Roman
Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions.
Surface and Interface Analysis. Roč. 50, č. 11 (2018), s. 1243-1249. ISSN 0142-2421. E-ISSN 1096-9918.
[17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017). Monpellier, 24.09.2017-29.09.2017]
Grant CEP: GA ČR GA15-01602S; GA MŠMT EF16_013/0001812; GA MŠMT LM2015056
Institucionální podpora: RVO:61389005 ; RVO:67985882
Klíčová slova: ion irradiation of crystals * MC modelling of ion channeling * RBS channeling * SOI material
Obor OECD: Nuclear physics; Electrical and electronic engineering (URE-Y)
Impakt faktor: 1.319, rok: 2018
Trvalý link: http://hdl.handle.net/11104/0289379