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0303822 - URE-Y 20010078 PL eng A - Abstrakt
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of ç-elements in the growth of InP layers for radiation detectors.
[Poznan]: [Faculty of Technological Physics Poznan University of Technology], 2001. VI Polish Conference on Crystal Growth - PCCG-VI. s. 37
[Polish Conference on Crystal Growth /PCCG-6./. 20.05.2001-23.05.2001, Poznan]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth metals * semiconductor materials
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Trvalý link: http://hdl.handle.net/11104/0114006
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of ç-elements in the growth of InP layers for radiation detectors.
[Poznan]: [Faculty of Technological Physics Poznan University of Technology], 2001. VI Polish Conference on Crystal Growth - PCCG-VI. s. 37
[Polish Conference on Crystal Growth /PCCG-6./. 20.05.2001-23.05.2001, Poznan]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth metals * semiconductor materials
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Trvalý link: http://hdl.handle.net/11104/0114006