Vytisknout
0303665 - URE-Y 20000047 PL eng A - Abstrakt
Procházková, Olga - Šrobár, Fedor - Zavadil, Jiří
InP-based epitaxial layers grown from rare earths-containing melts: technology and physical properties.
Warsaw: Institute of Physics Polish Academy of Sciences, 2000. XXIX International School on the Physics of Semiconducting Compounds. Program & Abstracts. s. 34
[Physics of Semiconducting Compounds /29./. 02.06.2000-09.06.2000, Jaszowiec]
Grant CEP: GA ČR GA102/99/0341
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: epitaxial layers * semiconductors * rare earth compounds
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Trvalý link: http://hdl.handle.net/11104/0113853
Procházková, Olga - Šrobár, Fedor - Zavadil, Jiří
InP-based epitaxial layers grown from rare earths-containing melts: technology and physical properties.
Warsaw: Institute of Physics Polish Academy of Sciences, 2000. XXIX International School on the Physics of Semiconducting Compounds. Program & Abstracts. s. 34
[Physics of Semiconducting Compounds /29./. 02.06.2000-09.06.2000, Jaszowiec]
Grant CEP: GA ČR GA102/99/0341
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: epitaxial layers * semiconductors * rare earth compounds
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Trvalý link: http://hdl.handle.net/11104/0113853