Vytisknout
0433687 - FZÚ 2015 CH eng A - Abstrakt
Vyskočil, Jan - Gladkov, Petar - Petříček, Otto - Hospodková, Alice - Pangrác, Jiří
Growth and properties of AIII BV QD structures for intermediate band solar cells.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
Grant CEP: GA ČR(CZ) GP14-21285P
Institucionální podpora: RVO:68378271 ; RVO:67985882
Klíčová slova: metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * solar cells
Trvalý link: http://hdl.handle.net/11104/0237896
Vyskočil, Jan - Gladkov, Petar - Petříček, Otto - Hospodková, Alice - Pangrác, Jiří
Growth and properties of AIII BV QD structures for intermediate band solar cells.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
Grant CEP: GA ČR(CZ) GP14-21285P
Institucionální podpora: RVO:68378271 ; RVO:67985882
Klíčová slova: metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * solar cells
Trvalý link: http://hdl.handle.net/11104/0237896