Košík

0496195 - FZÚ 2019 RIV PL eng A - Abstrakt
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 156-156.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * quantum wells * scintillator * low temperature buffer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289021