Košík

0568264 - FZÚ 2023 RIV DE eng A - Abstrakt
Batysta, Jan - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Kuldová, Karla
Compensation of strain in InGaN/GaN QWs by AlGaN layer.
Abstract book of the International Conference on Metalorganic Vapor Phase Epitaxy /20./ - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 200-200
[International Conference on Metalorganic Vapor Phase Epitaxy ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
Grant CEP: GA TA ČR(CZ) FW03010298
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * InGaN/GaN * quantum wells * strain
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: https://hdl.handle.net/11104/0339593