Košík

0496860 - FZÚ 2019 CZ eng A - Abstrakt
Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hývl, Matěj - Zíková, Markéta - Hulicius, Eduard
Role of V-pits in the InGaN/GaN multiple quantum well structures.
NANOCON 2017 - Book of Abstracts. Ostrava: Tanger Ltd, 2017 - (Shrbená, J.). s. 81-81. ISBN 978-80-87294-78-9.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. 18.10.2017-20.10.2017, Brno]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN heterostructure * scintillators * photoluminescence * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289480