Košík

0303823 - URE-Y 20010058 IT eng A - Abstrakt
Žďánský, Karel - Procházková, Olga - Zavadil, Jiří - Novotný, Jan
P-type InP grown by LPE from melts with rare earth admixtures.
[Parma]: [Instituto CNRMASPEC], 2001. DRIP IX - 9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Program and abstracts. s. 36
[DRIP /9./. 24.09.2001-28.09.2001, Rimini]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010104 Projekt 04/01:4044
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth metals * semiconductor materials
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Trvalý link: http://hdl.handle.net/11104/0114007