0576333 - ÚFM 2024 RIV US eng J - Journal Article
Ji, Y. - Frentrup, M. - Zhang, X. - Pongrácz, Jakub - Fairclough, S. M. - Liu, Y. - Zhu, T. - Oliver, Rachel A.
Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation.
Journal of Applied Physics. Roč. 134, č. 14 (2023), č. článku 145102. ISSN 0021-8979. E-ISSN 1089-7550
Institutional support: RVO:68081723
Keywords : InGaN * MQW * porosification * AFM * XRD * strain relaxation
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.7, year: 2023 ; AIS: 0.579, rok: 2023
Method of publishing: Open access
Result website:
https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-wellDOI: https://doi.org/10.1063/5.0165066
Permanent Link: https://hdl.handle.net/11104/0345962