Košík

0561007 - FZÚ 2023 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Hulicius, Eduard - Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design.
NANOCON 2021 - Conference proceedings. Ostrava: Tanger Ltd., 2021, s. 17-22. ISBN 978-80-88365-00-6. ISSN 2694-930X.
[International Conference on Nanomaterials - Research & Application /13./ NANOCON. Brno (CZ), 20.10.2021-22.10.2021]
Grant CEP: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: GaN devices * HEMT * MOVPE epitaxy * dislocation
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://www.confer.cz/nanocon/2021/4309-general-over-view-of-gan-devices-and-transport-properties-of-algan-gan-hemt-structures-impact-of-dislocation-density-and-improved-design
Trvalý link: https://hdl.handle.net/11104/0333759