Košík

0560116 - FZÚ 2023 RIV DE eng A - Abstrakt
Hubáček, Tomáš - Kuldová, Karla - Gedeonová, Zuzana - Hájek, František - Hubík, Pavel - Pangrác, Jiří - Oswald, Jiří - Hospodková, Alice
Effect of MOVPE growth conditions on germanium doped (In)GaN layers.
Book of Abstracts of the 20th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 208-208
[International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
Grant CEP: GA MŠMT(CZ) LTAIN19163
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaN * InGaN
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: https://hdl.handle.net/11104/0333147