Košík

0499566 - FZÚ 2019 RIV CH eng J - Článek v odborném periodiku
Babchenko, O. - Vanko, G. - Gerboc, M. - Ižák, Tibor - Vojs, M. - Lalinský, T. - Kromka, Alexander
Study on electronic properties of diamond/SiN_x-coated AlGaN/GaN high electron mobility transistors operating up to 500 degrees C.
Diamond and Related Materials. Roč. 89, Oct (2018), s. 266-272. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271
Klíčová slova: AlGaN/GaN heterostructure * diamond film * high electron mobility transistor * hybrid device * high temperature operation * electronic properties
Obor OECD: Electrical and electronic engineering
Impakt faktor: 2.290, rok: 2018
Trvalý link: http://hdl.handle.net/11104/0291761