Košík

  1. 1.
    0576333 - ÚFM 2024 RIV US eng J - Journal Article
    Ji, Y. - Frentrup, M. - Zhang, X. - Pongrácz, Jakub - Fairclough, S. M. - Liu, Y. - Zhu, T. - Oliver, Rachel A.
    Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation.
    Journal of Applied Physics. Roč. 134, č. 14 (2023), č. článku 145102. ISSN 0021-8979. E-ISSN 1089-7550
    Institutional support: RVO:68081723
    Keywords : InGaN * MQW * porosification * AFM * XRD * strain relaxation
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 2.7, year: 2023 ; AIS: 0.579, rok: 2023
    Method of publishing: Open access
    Result website:
    https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-wellDOI: https://doi.org/10.1063/5.0165066
    Permanent Link: https://hdl.handle.net/11104/0345962
     
  2. 2.
    0482472 - ÚGN 2018 RIV DE eng J - Journal Article
    Sysala, Stanislav - Čermák, M. - Ligurský, Tomáš
    Subdifferential-based implicit return-mapping operators in Mohr-Coulomb plasticity.
    ZAMM-Zeitschrift fur Angewandte Mathematik und Mechanik. Roč. 97, č. 12 (2017), s. 1502-1523. ISSN 0044-2267. E-ISSN 1521-4001
    R&D Projects: GA MŠMT LQ1602
    Institutional support: RVO:68145535
    Keywords : consistent tangent operator * implicit return-mapping scheme * incremental limit analysis * infinitesimal plasticity * Mohr-Coulomb yield surface
    OECD category: Applied mathematics
    Impact factor: 1.296, year: 2017 ; AIS: 0.527, rok: 2017
    Result website:
    http://onlinelibrary.wiley.com/doi/10.1002/zamm.201600215/fullDOI: https://doi.org/10.1002/zamm.201600215
    Permanent Link: http://hdl.handle.net/11104/0277904
     
    FileDownloadSizeCommentaryVersionAccess
    UGN_0482472.pdf11.1 MBAuthor’s postprintrequire
     

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