0470883 - FZÚ 2017 RIV NL eng J - Článek v odborném periodiku
Kamada, K. - Shoji, Y. - Kochurikhin, V.V. - Okumura, S. - Yamamoto, S. - Nagura, A. - Yeom, J.Y. - Kurosawa, S. - Yokota, Y. - Ohashi, Y. - Nikl, Martin - Yoshikawa, A.
Growth and scintillation properties of 3 in. diameter Ce doped Gd₃Ga₃Al₂O₁₂ scintillation single crystal.
Journal of Crystal Growth. Roč. 452, Oct (2016), s. 81-84. ISSN 0022-0248. E-ISSN 1873-5002.
[American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015]
Grant CEP: GA MŠMT(CZ) LH14266; GA ČR GJ15-18300Y
GRANT EU: European Commission(XE) 644260 - INTELUM
Institucionální podpora: RVO:68378271
Klíčová slova: single crystal growth * oxides * scintillator materials * scintillators
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.751, rok: 2016 ; AIS: 0.402, rok: 2016
DOI: https://doi.org/10.1016/j.jcrysgro.2016.04.037
Trvalý link: http://hdl.handle.net/11104/0268397