Košík

0390887 - FZÚ 2013 CH eng A - Abstrakt
Mikhailova, M. - Ivanov, E. - Danilov, L. - Kalinina, K. - Stoyanov, N. - Zegrya, G. - Yakovlev, Yu. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří
Enhancement of quantum effciency and optical power due to impact ionization in GaSb based heterostructures with deep Al(As)Sb/InAsSb/Al)As)Sb quantum wells.
nternational Conference on the Physics of Semiconductors 2012 /31./, ICPS 2012. 2012. s. 121-121.
[nternational Conference on the Physics of Semiconductors 2012 /31./, ICPS 2012. 29.07.2012 - 03.08. 2012, Zurich]
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: GaSb * quantum wells * LEDs
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0219759