Košík

0105892 - URE-Y 20040171 FR eng A - Abstrakt
Vaniš, Jan - Chow, D. H. - Šroubek, Filip - McGill, T. C. M. - Walachová, Jarmila
Characterization of InAs/AlSb tunneling double barrier heterostructure by reverse ballistic electron emission spectroscoipy with InAs as base electrode.
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies - EXMATEC'2004. [Montpellier]: [GES], 2004. s. 164.
[EXMATEC 2004 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /7./. 01.06.2004-04.06.2004, Montpellier]
Grant CEP: GA AV ČR(CZ) KSK1010104
Klíčová slova: scanning tunelling microscopy * ballistic transport * semiconductor heterojunctions
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0013080