Košík

0095242 - ÚFE 2008 US eng A - Abstrakt
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Vaniš, Jan - Oswald, Jiří - Kuldová, Karla - Vyskočil, J. - Melichar, Karel - Šimeček, Tomislav
Growth and properties of InAs/In_xGa_1-xAs/GaAs quantum dot structures.
[Růst a vlastnosti InAs/In_xGa_1-xAs/GaAs struktur s kvantovými tečkami.]
2007 Proceedings of the 15th International Conference on Crystal Growth held in conjuction with the 13th International Conference on Vapour Growth and Epitaxy and the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy and 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy. [Salt Lake City]: OMNI Press, 2007. s. 636--.
[ICCG /15./ with the ICVGE /13./ and OMVPE /13./. 12.08.2007-17.08.2007, Salt Lake City]
Grant CEP: GA ČR GA202/05/0242
Výzkumný záměr: CEZ:AV0Z10100521; CEZ:AV0Z20670512
Klíčová slova: quantum dots * ballistic transport * semiconductor heterojunctions
Kód oboru RIV: JJ - Ostatní materiály
Trvalý link: http://hdl.handle.net/11104/0154878