Počet záznamů: 1
Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers
- 1.
SYSNO ASEP 0496190 Druh ASEP A - Abstrakt Zařazení RIV O - Ostatní Název Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers Tvůrce(i) Hubáček, Tomáš (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAICelkový počet autorů 7 Zdroj.dok. Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. - : University of Warsaw, 2018
S. 155-155Poč.str. 1 s. Akce International Symposium on Growth of III-Nitrides ISGN-7 Datum konání 05.08.2018 - 10.08.2018 Místo konání Warsaw Země PL - Polsko Typ akce WRD Jazyk dok. eng - angličtina Země vyd. PL - Polsko Klíč. slova InGaN ; QW capping ; MOVPE Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) CEP LO1603 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GA16-15569S GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 Anotace In our work we will show how to significantly increase the In content in QWs without lowering the QW growth temperature. We have studied different growth modes of InGaN/(In)GaN heterostructure while the QW growth parameters (temperature, pressure, flow, etc.) were kept constant. We have only changed parameters during the temperature rise to the barrier growth and parameters during the barrier growth. We have introduced a small TMIn flow immediately after the QW growth and observed not only increased concentration of In in the structure (in both, QW and barrier) but also strong increase of the growth rate (confirmed by SIMS and XRD measurements). We explain this phenomenon by suppression of In desorption during the initial phase of the barrier growth. Photoluminescence spectra of samples with different combinations of (In)GaN QW capping and (In)GaN barriers will be shown and discussed. Luminescent homogeneity of these samples was characterized by PL intensity maps.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2019
Počet záznamů: 1