Počet záznamů: 1
Diamond growth on horizontally and vertically aligned Si substrates in low pressure surface wave plasma
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SYSNO ASEP 0486982 Druh ASEP A - Abstrakt Zařazení RIV O - Ostatní Název Diamond growth on horizontally and vertically aligned Si substrates in low pressure surface wave plasma Tvůrce(i) Domonkos, Mária (FZU-D) RID
Ižák, Tibor (FZU-D) RID
Varga, Marián (FZU-D) RID, ORCID
Potocký, Štěpán (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAICelkový počet autorů 5 Zdroj.dok. 2nd International Conference on Applied Surface Science (ICASS). - Dalian, 2017 / Rudolph H. - ISSN 0169-4332 Poč.str. 1 s. Forma vydání Online - E Akce International Conference on Applied Surface Science (ICASS) /2./ Datum konání 12.06.2017 - 15.06.2017 Místo konání Dalian Země CN - Čína Typ akce WRD Jazyk dok. eng - angličtina Země vyd. CN - Čína Klíč. slova nucleation ; Si substrates ; VerS ; HorS Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) CEP GBP108/12/G108 GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 Anotace This work focuses on spontaneous nucleation on horizontally and vertically aligned nontreated Si substrates. Diamond growth is initiated using a CH₄/H₂/CO₂ gas mixture with varying H content for 5 and 10 hours. As a reference, nucleated substrates are investigated. The SEM and AFM images reveal variation in the properties of samples (size of grains, surface coverage, ND, film thickness) which depend on the sample alignment and Z-axes of VerS. Independently of deposition conditions, the grain size and density and film thickness decreases in the downward direction. The grain population exhibits a polymodal size distribution on the whole substrate for both VerS and HorS. Moreover, for both non-treated and nucleated samples the density and size of diamond grains grown on HorS are similar to the size/density on VerS at a specific Z-position. Our findings confirm that the linear antenna system can be routinely utilised for growing D on 3D substrates.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2018 Elektronická adresa https://www.elsevier.com/events/conferences/international-conference-on-applied-surface-science/programme
Počet záznamů: 1