Počet záznamů: 1
Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar.sup.+./sup. ion beam
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SYSNO ASEP 0556898 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam Tvůrce(i) Vacík, Jiří (UJF-V) RID, ORCID, SAI
Cannavó, Antonino (UJF-V) ORCID, SAI
Bakardjieva, Snejana (UACH-T) SAI, RID, ORCID
Kupčík, Jaroslav (UACH-T) SAI, RID, ORCID
Lavrentiev, Vasyl (UJF-V) RID, ORCID, SAI
Ceccio, Giovanni (UJF-V) ORCID, RID, SAI
Horák, Pavel (UJF-V) RID, ORCID
Němeček, J. (CZ)
Verna, A. (IT)
Parmeggiani, M. (IT)
Calcagno, L. (IT)
Klie, R. (US)
Duchon, J. (CZ)Celkový počet autorů 13 Zdroj.dok. Radiation Effects and Defects in Solids. - : Taylor & Francis - ISSN 1042-0150
Roč. 177, 1-2 (2022), s. 137-160Poč.str. 24 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova ion beam synthesis ; Hf-In-C nanocomposite ; Hf2InC MAX phase ; HfC0 ; (95) phase ; radiation tolerance Obor OECD Nuclear related engineering CEP EF16_013/0001812 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GA18-21677S GA ČR - Grantová agentura ČR Výzkumná infrastruktura CANAM II - 90056 - Ústav jaderné fyziky AV ČR, v. v. i.
CzechNanoLab - 90110 - Vysoké učení technické v BrněZpůsob publikování Omezený přístup Institucionální podpora UJF-V - RVO:61389005 ; UACH-T - RVO:61388980 UT WOS 000770467000001 EID SCOPUS 85126828743 DOI 10.1080/10420150.2022.2049788 Anotace Thin films consisting of 17 groups of Hf/In/C multilayers cyclically alternating layers of Hf, In and C each with a thickness of 4-5 nm were synthesized by ion sputtering using a 25 keV Ar+ ion beam with 400 mu A current and targets made of pure hafnium, indium and carbon. The films were subsequently annealed in vacuum at 120 degrees C for 24 hours to induce intermixing of elements phases, their interaction, and formation of the Hf-In-C nanostructures (including the Hf2InC MAX phase). After fabrication, a part of the pristine (as deposited) samples was irradiated by 200 keV Ar+ ions at high fluences 10(15) and 10(17) cm(-2). Both samples (as prepared and irradiated) were analyzed by IBA nuclear analytical methods, as well as by AFM and TEM microscopic techniques, and by XPS and profilometry to understand the microstructural evolution. Moreover, nanoindentation analysis was performed to assess the effects of ion irradiation on the microstructure and mechanical properties of the films. The experimental results showed that thin Hf-In-C nanostructured films can be formed by ion sputtering with promising mechanical parameters. The irradiated Hf-In-C films were found to be resistant only up to a fluence of about 10(15) Ar cm(-2). At higher fluences it degrades, and Hf2InC transforms to the binary HfC0.95 phase due to sublimation of In. At 10(17) cm(-2) the original matrix (including M(2)AX) is destroyed, and instead, a mixture of MX binary phases (e.g. HfC0.95) and crystalline oxides (e.g. HfO2 and In2O3) are formed. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2023 Elektronická adresa https://doi.org/10.1080/10420150.2022.2049788
Počet záznamů: 1