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Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC
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SYSNO ASEP 0544608 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC Tvůrce(i) Rathore, S. (TW)
Patel, Deepak Kumar (IN)
Thakur, Mukesh Kumar (UFCH-W)
Haider, Golam (UFCH-W) ORCID, RID
Kalbáč, Martin (UFCH-W) RID, ORCID
Kruskopf, M. (DE)
Liu, Ch.-I. (US)
Rigosi, A. F. (US)
Elmquist, R. E. (US)
Liang, Ch.-T. (TW)
Hong, P.-D. (TW)Zdroj.dok. Carbon. - : Elsevier - ISSN 0008-6223
Roč. 184, OCT 2021 (2021), s. 72-81Poč.str. 10 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova silicon carbide ; epitaxial graphene ; binary response ; broadband photodetector Vědní obor RIV CF - Fyzikální chemie a teoretická chemie Obor OECD Physical chemistry CEP GX20-08633X GA ČR - Grantová agentura ČR Způsob publikování Omezený přístup Institucionální podpora UFCH-W - RVO:61388955 UT WOS 000704334600007 EID SCOPUS 85112361716 DOI 10.1016/j.carbon.2021.07.098 Anotace Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H–SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H–SiC-based device that enables us to observe the positive photoresponse for (405–532) nm and negative photoresponse for (632–980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm2 at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection. Pracoviště Ústav fyzikální chemie J.Heyrovského Kontakt Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Rok sběru 2022 Elektronická adresa http://hdl.handle.net/11104/0321442
Počet záznamů: 1