Počet záznamů: 1

ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

SYSNO ASEP	0540385
Druh ASEP	A - Abstrakt
Zařazení RIV	O - Ostatní
Název	ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C
Tvůrce(i)	Stuchlíková, The-Ha (FZU-D)_{RID, ORCID} Čermák, Jan (FZU-D)_{RID, SAI, ORCID} Babčenko, Oleg (FZU-D)_ORCID Remeš, Zdeněk (FZU-D)_{RID, ORCID} Kromka, Alexander (FZU-D)_{RID, ORCID, SAI} Stuchlík, Jiří (FZU-D)_{RID, ORCID}
Celkový počet autorů	6
Zdroj.dok.	Book of Abstracts of the 18th International Conference on Thin Films & 18th Joint Vacuum Conference. - Budapest, 2020 / Pécz B. S. 149-149
Poč.str.	1 s.
Forma vydání	Online - E
Akce	18th International Conference on Thin Films & 18th Joint Vacuum Conference
Datum konání	22.11.2020 - 26.11.2020
Místo konání	Budapest
Země	HU - Maďarsko
Typ akce	EUR
Jazyk dok.	eng - angličtina
Země vyd.	HU - Maďarsko
Klíč. slova	ZnO ; diamond thin films ; a-SiC:H ; thin film diodes
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
CEP	EF16_019/0000760 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
	GC19-02858J GA ČR - Grantová agentura ČR
Institucionální podpora	FZU-D - RVO:68378271
Anotace	In this study, we tested temperature stability of aluminum doped ZnO thin films and compare them with nano-crystalline diamond (NCD). The NCD films were deposited at temperature 450 C. Both types of thin films evince high transmission and a good scattering of light via their high roughness. The surface morphology of the layers before and after annealing in high vacuum in the range from 350 to 450 C were characterized by scanning electron microscopy and atomic force microscopy. As well as the changes of optical transmissions and electrical conductivities were studied. Finally, a-SiC:H diode structures were fabricated on the annealed films and characterized by I-V measurements.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2021

Počet záznamů: 1