Počet záznamů: 1
Large damping-like spin-orbit torque in a 2D conductive 1T-TaS.sub.2./sub. monolayer
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SYSNO ASEP 0539193 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Large damping-like spin-orbit torque in a 2D conductive 1T-TaS2 monolayer Tvůrce(i) Husain, S. (SE)
Chen, X. (SE)
Gupta, R. (SE)
Behera, N. (SE)
Kumar, Prabhat (FZU-D) ORCID
Edvinsson, T. (SE)
Garcia-Sanchez, F. (ES)
Brucas, R. (SE)
Chaudhary, S. (IN)
Sanyal, B. (SE)
Svedlindh, P. (SE)
Kumar, A. (SE)Celkový počet autorů 12 Zdroj.dok. Nano Letters. - : American Chemical Society - ISSN 1530-6984
Roč. 20, č. 9 (2020), s. 6372-6380Poč.str. 9 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova transition-metal dichalcogenide ; damping-like torque ; spin-torque ferromagnetic resonance ; planar Hall effect Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) Způsob publikování Open access Institucionální podpora FZU-D - RVO:68378271 UT WOS 000571442000019 EID SCOPUS 85090613723 DOI 10.1021/acs.nanolett.0c01955 Anotace A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9 10 × Ω 5 2ℏe − − 1 1 m ) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin−orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2021 Elektronická adresa http://hdl.handle.net/11104/0317378
Počet záznamů: 1