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Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions
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SYSNO ASEP 0536509 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions Tvůrce(i) Macková, Anna (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Cutroneo, Mariapompea (UJF-V) ORCID, RID, SAI
Flaks, Josef (UJF-V)
Nekvindová, P. (CZ)
Michalcová, A. (CZ)
Holý, V. (CZ)
Košutová, T. (CZ)Celkový počet autorů 9 Zdroj.dok. Physical Chemistry Chemical Physics. - : Royal Society of Chemistry - ISSN 1463-9076
Roč. 22, č. 41 (2020), s. 23563-23573Poč.str. 11 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova ion-implantation ; RBS-C ; Raman spectroscopy Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Obor OECD Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) CEP EF16_013/0001812 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy LM2015056 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GA18-03346S GA ČR - Grantová agentura ČR Způsob publikování Omezený přístup Institucionální podpora UJF-V - RVO:61389005 UT WOS 000582937400008 EID SCOPUS 85094932404 DOI 10.1039/d0cp04119j Anotace Noble metal nanoparticles dispersed in semiconductors, mainly in ZnO, have been intensively investigated. Au dispersion and possible precipitation as well as damage growth were studied in ZnO of various orientations, a-plane (1120) and c-plane (0001), using 1 MeV Au+-ion implantation with an ion fluence of 1.5 x 10(16) cm(-2) and subsequently annealed at 600 degrees C in an ambient atmosphere for one hour. Afterwards, irradiation with 10 MeV O3+ at a fluence of 5 x 10(14) cm(-2) was used to modify Au distribution and internal morphology as well as to follow the structural modification of ZnO under high-energy light-ion irradiation. Rutherford backscattering spectrometry in the channelling mode (RBS-C) and Raman spectroscopy show that O irradiation with high electronic energy transfer distinctly modifies the implanted Au layer in various ZnO facets. It introduces additional displacement and disorder in the O sublattice mainly in the a-plane while not creating an additional strain in this facet. This has been confirmed by XRD analysis, identifying the appearance of an additional phase (nanocrystallites) after Au implantation, which diminishes after O irradiation, and RBS-C has identified decreased disorder in the Zn-sublattice. Unlike in c-plane ZnO, it has been possible to observe a local compressive deformation around spherical defects, which is more pronounced after O irradiation simultaneously with the vertical strain introduced in the Au-implanted and annealed layer. Transmission electron microscopy (TEM) with energy dispersive spectroscopy (EDS) was employed to investigate the interior morphology, showing the occurrence of Au-hcp clusters of the small sizes of about 4-10 nm, neither the cluster sizes nor their shapes are significantly affected by the O irradiation. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2021 Elektronická adresa https://doi.org/10.1039/D0CP04119J
Počet záznamů: 1