Počet záznamů: 1
Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier
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SYSNO ASEP 0536232 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier Tvůrce(i) Tulić, S. (AT)
Waitz, T. (AT)
Romanyuk, Olexandr (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Čaplovičová, M. (SK)
Habler, G. (AT)
Vretenár, V. (SK)
Kotlár, M. (SK)
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Rezek, Bohuslav (FZU-D) RID, ORCID
Skákalová, V. (AT)Celkový počet autorů 11 Zdroj.dok. RSC Advances. - : Royal Society of Chemistry
Roč. 10, č. 14 (2020), s. 8224-8232Poč.str. 9 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova oxide barrier ; Si substrates ; nanocrystalline diamond Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) CEP EF16_019/0000760 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Způsob publikování Open access Institucionální podpora FZU-D - RVO:68378271 UT WOS 000521329900027 EID SCOPUS 85081115845 DOI 10.1039/d0ra00809e Anotace Manocrystalline diamond (NCD)films grown on Si substrates by microwave plasma enhanced chemicalvapor deposition (MWPECVD) were subjected to Ni-mediated graphitization to cover them witha conductive layer. Results of transmission electron microscopy including electron energy-lossspectroscopy of cross-sectional samples demonstrate that the oxide layer on Si substrates ( 5 nm nativeSiO2) has been damaged by microwave plasma during the early stage of NCD growth. During the heattreatment for graphitizing the NCD layer, the permeability or absence of the oxide barrier allow Ninanoparticles to diffuse into the Si substrate and cause additional solid-state reactions producingpyramidal crystals of NiSi2and SiC nanocrystals. The latter are found impinged into the NiSi2pyramidsbut only when the interfacial oxide layer is absent, replaced by amorphous SiC. The complex phasemorphology of the samples is also reflected in the temperature dependence of electrical conductivity,where multiple pathways of the electronic transport dominate in different temperature regions. Wepresent models explaining the observed cascade of solid-state reactions and resulting electronictransport properties of such heterostructures. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2021 Elektronická adresa http://hdl.handle.net/11104/0314049
Počet záznamů: 1