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Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor
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SYSNO ASEP 0533057 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor Tvůrce(i) Haider, Golam (UFCH-W) ORCID, RID
Wang, Y. H. (CN)
Farjana, Jaishmin Sonia (UFCH-W) ORCID, RID
Chiang, Ch.-W. (CN)
Frank, Otakar (UFCH-W) RID, ORCID
Vejpravová, J. (CZ)
Kalbáč, Martin (UFCH-W) RID, ORCID
Chen, Y.-F. (CN)Číslo článku 2000859 Zdroj.dok. Advanced Optical Materials. - : Wiley - ISSN 2195-1071
Roč. 8, č. 19 (2020)Poč.str. 10 s. Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova zinc-oxide nanostructures ; hybrid graphene ; strain sensors ; electronics ; photodetectors ; responsivity ; transistors ; skin ; mechanics ; pressure ; gate-tunable phototransistor ; single-layer graphene ; stretchable phototransistor ; ultrahigh responsivity ; ZnO nanoparticles Vědní obor RIV CF - Fyzikální chemie a teoretická chemie Obor OECD Physical chemistry CEP GX20-08633X GA ČR - Grantová agentura ČR EF16_027/0008355 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy LTAUSA19001 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy EF16_026/0008382 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Způsob publikování Omezený přístup Institucionální podpora UFCH-W - RVO:61388955 UT WOS 000550679500001 EID SCOPUS 85088297638 DOI 10.1002/adom.202000859 Anotace Despite being one of the most robust materials with intriguing optoelectronic properties, the practical use of single-layer graphene (SLG) in soft-electronic technologies is limited due to its poor native stretchability, low absorption coefficient, poor on/off ratio, etc. To circumvent these difficulties, here, a rippled gate-tunable ultrahigh responsivity nanostack phototransistor composed of SLG, semiconductor-nanoparticles (NPs), and metallic-nanowires (NWs) embedded in an elastic film is proposed. The unique electronic conductivity of SLG and high absorption strength of semiconductor-NPs produce an ultrahigh photocurrent gain. The metallic NWs serve as an excellent stretchable gate electrode. The ripple structured nanomaterials surmount their native stretchability, providing strength and electromechanical stability to the composite. Combining all these unique features, highly stretchable and ultrasensitive phototransistors are created, which can be stretched up to 30% with high repeatability maintaining a photoresponsivity, photocurrent gain, and detectivity of approximate to 10(6)A W-1, 10(7), and 10(13)Jones, respectively, which are comparable with the same class of rigid devices. In addition, the device can be turned-off by applying a suitable gate voltage, which is very convenient for photonic circuits. Moreover, the study can be extended to many other 2D systems, and therefore paves a crucial step for designing high-performance soft optoelectronic devices for practical applications. Pracoviště Ústav fyzikální chemie J.Heyrovského Kontakt Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Rok sběru 2021 Elektronická adresa http://hdl.handle.net/11104/0311556
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