Počet záznamů: 1
Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions
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SYSNO ASEP 0524526 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions Tvůrce(i) Mikšová, Romana (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Harcuba, P. (CZ)
Veselý, J. (CZ)
Holý, V. (CZ)
Kentsch, U. (DE)
Macková, Anna (UJF-V) RID, ORCID, SAICelkový počet autorů 7 Zdroj.dok. Nuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X
Roč. 474, č. 7 (2020), s. 29-34Poč.str. 6 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova ion-irradiation of crystals ; Yttria-stabilized zirconia ; RBS-channeling ; Ag particles Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Obor OECD Nuclear related engineering CEP EF16_013/0001812 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GA18-03346S GA ČR - Grantová agentura ČR LM2015056 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Způsob publikování Omezený přístup Institucionální podpora UJF-V - RVO:61389005 UT WOS 000531672400006 EID SCOPUS 85083821229 DOI 10.1016/j.nimb.2020.04.008 Anotace Yttria stabilized zirconia (YSZ) is well known as a radiation-resistant material. In this study, we present results from 400 keV Ag+ implantations of the (1 0 0) YSZ single crystals to fluences ranging from 5 x 10(15) to 5 x 10(16) cm(-2). The damage depth profiling and accumulation were probed using Rutherford backscattering spectrometry in the channelling mode (RBS-C), Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The axial channelling effect of 2 MeV He+ ions in the implanted YSZ was studied. RBS-C provides us with detailed information about the displaced atoms density depth profiles progressing into greater depths, especially in the case of higher fluence. TEM was utilized to characterize the microstructure evolution and damage accumulation in the buried layer after the implantation. At the highest fluence (5 x 10(16) cm(-2)), Ag depth profile in the depth of 30-130 nm was identified in TEM bright and dark field images as well as in the electron diffraction patterns. Ag depth profiles are in agreement with depth profiles determined by RBS which show maximum Ag concentration in the depth of 94 nm. The reason for the decrease of the deformation identified by XRD in the vertical direction is the defect formation. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2021 Elektronická adresa https://doi.org/10.1016/j.nimb.2020.04.008
Počet záznamů: 1