Počet záznamů: 1
Towards the evaluation of defects in MoSinf2/inf using cryogenic photoluminescence spectroscopy
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SYSNO ASEP 0523058 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Towards the evaluation of defects in MoSinf2/inf using cryogenic photoluminescence spectroscopy Tvůrce(i) Verhagen, T. (CZ)
Guerra, Valentino Libero Pio (UFCH-W) ORCID, RID, SAI
Haider, Golam (UFCH-W) ORCID, RID
Kalbáč, Martin (UFCH-W) RID, ORCID
Vejpravová, J. (CZ)Zdroj.dok. Nanoscale. - : Royal Society of Chemistry - ISSN 2040-3364
Roč. 12, č. 5 (2020), s. 3019-3028Poč.str. 10 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova Molybdenum compounds ; Transition metals ; Dichalcogenides TMDs Vědní obor RIV CF - Fyzikální chemie a teoretická chemie Obor OECD Physical chemistry CEP GA18-20357S GA ČR - Grantová agentura ČR EF16_013/0001821 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy LM2015073 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Způsob publikování Open access Institucionální podpora UFCH-W - RVO:61388955 UT WOS 000516533300063 EID SCOPUS 85079079417 DOI 10.1039/c9nr07246b Anotace Characterization of the type and density of defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) is important as the nature of these defects strongly influences the electronic and optical properties of the material, especially its photoluminescence (PL). Defect characterization is not as straightforward as it is for graphene films, where the D and D′ Raman scattering modes easily indicate the density and type of defects in the graphene layer. Thus, in addition to the Raman scattering analysis, other spectroscopic techniques are necessary to perform detailed characterization of atomically thin TMD layers. We demonstrate that PL spectroscopy performed at liquid helium temperatures reveals the key fingerprints of defects in TMDs and hence provides valuable information about their origin and concentration. In our study, we address defects in chemical vapor deposition (CVD)-grown MoS2 monolayers. A significant difference is observed between the as-grown monolayers compared with the CVD-grown monolayers transferred onto a Si/SiO2 substrate, which contain extra defects due to the transfer process. We demonstrate that the temperature-dependent Raman and PL micro-spectroscopy techniques enable disentangling the contributions and locations of various defect types in TMD systems. Pracoviště Ústav fyzikální chemie J.Heyrovského Kontakt Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Rok sběru 2021 Elektronická adresa http://hdl.handle.net/11104/0307466
Počet záznamů: 1