Počet záznamů: 1
Optimization of a multiphysics problem in semiconductor laser design
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SYSNO ASEP 0501588 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Optimization of a multiphysics problem in semiconductor laser design Tvůrce(i) Adam, Lukáš (UTIA-B)
Hintermüller, M. (DE)
Peschka, D. (DE)
Surowiec, T. (DE)Celkový počet autorů 4 Zdroj.dok. Siam Journal on Applied Mathematics. - : SIAM Society for Industrial and Applied Mathematics - ISSN 0036-1399
Roč. 79, č. 1 (2019), s. 257-283Poč.str. 27 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova optoelectronics ; semiconductor laser ; strained germanium microbridges ; van Roosbroeck ; phase field ; design optimization ; topology optimization ; PDE-constrained optimization Vědní obor RIV BA - Obecná matematika Obor OECD Pure mathematics Způsob publikování Omezený přístup Institucionální podpora UTIA-B - RVO:67985556 UT WOS 000460127100012 EID SCOPUS 85063193497 DOI 10.1137/18M1179183 Anotace A multimaterial topology optimization framework using phase elds is suggested for the simultaneous optimization of mechanical and optical properties to be used in the development of optoelectronic devices. The technique provides a means of determining the cross section of the material alignments needed to create a sufficiently large strain pro le within an optically active region of a photonic device. Based on the physical aspects of the underlying device, a nonlinear multiphysics model for the elastic and optical properties is proposed in the form of a linear elliptic partial differential equation (elasticity) coupled via the underlying topology to an eigenvalue problem of Helmholtz type (optics). The differential sensitivity of the displacement and eigenfunctions with respect to the changes in the underlying topology is investigated. After proving existence and optimality results, numerical experiments leading to an optimal material distribution for maximizing the strain in a Ge-on-Si microbridge are given. The presence of a net gain at low voltages for the optimal design is demonstrated by solving the steady-state van Roosbroeck (drift-diffusion) system, which proves the viability of the approach for the development of next-generation photonic devices. Pracoviště Ústav teorie informace a automatizace Kontakt Markéta Votavová, votavova@utia.cas.cz, Tel.: 266 052 201. Rok sběru 2020 Elektronická adresa https://epubs.siam.org/doi/abs/10.1137/18M1179183
Počet záznamů: 1