Počet záznamů: 1
Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions
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SYSNO ASEP 0497102 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions Tvůrce(i) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Sofer, Z. (CZ)
Klímová, K. (CZ)
Sedmidubský, D. (CZ)
Mikulics, M. (DE)
Bottger, R. (DE)
Akhmadaliev, S. (DE)Celkový počet autorů 9 Zdroj.dok. Surface and Coatings Technology. - : Elsevier - ISSN 0257-8972
Roč. 355, SI (2018), s. 22-28Poč.str. 7 s. Forma vydání Tištěná - P Akce International Conference on Surface Modification of Materials by Ion Beams (SMMIB) Datum konání 09.07.2017 - 14.07.2017 Místo konání Lisbon Země PT - Portugalsko Typ akce WRD Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova GaN damage accumulation ; structure modification in c-plane and a-plane ; GaN ; RBS channeling studies of implanted GaN Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Obor OECD Nuclear physics CEP EF16_013/0001812 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy LM2015056 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GA15-01602S GA ČR - Grantová agentura ČR Institucionální podpora UJF-V - RVO:61389005 UT WOS 000449896800006 EID SCOPUS 85042634118 DOI 10.1016/j.surfcoat.2018.02.097 Anotace GaN is the most actively studied wide-bandgap material, applicable e.g. in short-wavelength optoelectronic devices, high-electron-mobility transistors, and semiconductor lasers. The crystallographic orientation of an implanted crystal can significantly influence the optical properties of the implanted layer, reflecting the rearrangement of the crystal matrix after annealing. The annealing procedure, influencing dynamic recovery, point defect diffusion and large defect stabilisation, depending on the GaN crystal orientation and the used ion implantation parameters, is still an important issue to be studied. We have studied the structural and compositional changes of the GaN-epitaxial-layers of c-plane and a-plane orientations grown by MOVPE and implanted with Gd and Kr ions using the ion energy of 400 keV and ion fluences of 5 x 10(14) cm(-2), 1 x 10(15) cm(-2) and 5 x 10(15) cm(-2) with subsequent annealing at 800 degrees C in ammonia. Dopant depth profiling was accomplished by Rutherford backscattering spectrometry (RBS). Induced structure disorder and its recovery during subsequent annealing were characterised by RBS channelling and Raman spectroscopy. Ion-implanted c-plane and a-plane GaN exhibit significant differences in damage accumulation simultaneously with post-implantation annealing, inducing a different structural reorganization of the GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the ion-implantation fluence and ion mass. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2019
Počet záznamů: 1