Počet záznamů: 1
Structural study and ion-beam channelling in Si < 1 0 0 > modified by Kr+, Ag-+,Ag- 2+ and Au-+,Au- 2+ ions
- 1.
SYSNO ASEP 0493527 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Structural study and ion-beam channelling in Si < 1 0 0 > modified by Kr+, Ag-+,Ag- 2+ and Au-+,Au- 2+ ions Tvůrce(i) Mikšová, Romana (UJF-V) RID, ORCID, SAI
Macková, Anna (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Slepička, P. (CZ)
Švorčík, V. (CZ)Celkový počet autorů 6 Zdroj.dok. Applied Surface Science. - : Elsevier - ISSN 0169-4332
Roč. 458, č. 11 (2018), s. 722-733Poč.str. 12 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova ion irradiation of silicon ; ion channelling in a crystal material ; MC modeling of ion channelling ; structural modification of an ion-implanted silicon crystal Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Obor OECD Nuclear physics CEP LM2015056 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GBP108/12/G108 GA ČR - Grantová agentura ČR EF16_013/0001812 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora UJF-V - RVO:61389005 UT WOS 000441400000084 EID SCOPUS 85050561521 DOI 10.1016/j.apsusc.2018.07.118 Anotace A Si-crystal layer on SiO2/Si was irradiated using 0.4 MeV Kr+, Ag+, Au+ and 5.0 MeV Ag2+, Au2+ at ion fluences of 0.5 x 10(15)-5.0 x 10(15)cm(-2). The induced structural modification in a Si crystal strongly influences ion-beam channelling phenomena through the introduced point defects, damage accumulation and induced internal strain. He+ ion channelling in the ion-implanted Si structure was studied, simultaneously with the structure and surface-morphology characterization of Si-irradiated layers, in connection with the ion-implantation parameters and prevailing energy-stopping type. The dislocated atom-depth profiles in the Si layer and the Si sub-surface layer were extracted from Rutherford backscattering spectrometry in the channelling mode (RBS-C). RBS-C shows the density of gradually displaced atoms as a function of ion fluence and ion mass for 5.0-MeV-ion implantation. The relative disorder grows more progressively for Au-ion implantation, where the thicker disordered layer was also observed in connection to the higher density collision cascade comparing to Ag+ ions. This phenomenon was discussed in the frame of the structural RBS-C and surface morphological data from AFM. The axial channelling effect of He+ ions measured in the 5.0-MeV-ion-implanted Si layer is varying during 2.0-MeV-He+ channelling in consequences of the various implantation fluences. The narrowing of axial channels observed in RBS-C was correlated to the number of produced vacancies in the Si layer after ion implantation and compared to MC simulations performed by FLUX. Nanostructured surface morphology modification has been detected mainly in 0.4-MeV-implanted Si layers using atomic force microscopy (AFM) studies, where the nuclear stopping is a prevalent phenomenon. Fourier transformation infrared spectroscopy (FTIR) has shown SOI modification mainly done by Si rearrangement and modified by possible Si-O-Si bonds creation. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2019
Počet záznamů: 1