Počet záznamů: 1
Magnetron sputtered Hf-B-Si-C-N films with controlled electrical conductivity and optical transparency, and with ultrahigh oxidation resistance
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SYSNO ASEP 0489160 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Magnetron sputtered Hf-B-Si-C-N films with controlled electrical conductivity and optical transparency, and with ultrahigh oxidation resistance Tvůrce(i) Šímová, V. (CZ)
Vlček, J. (CZ)
Zuzjaková, Š. (CZ)
Houška, J. (CZ)
Shen, Y. (US)
Jiang, J. C. (US)
Meletis, E. I. (US)
Peřina, Vratislav (UJF-V) RIDCelkový počet autorů 8 Zdroj.dok. Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 653, č. 5 (2018), s. 333-340Poč.str. 8 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova Hf-B-Si-C-N films ; pulsed reactive magnetron sputtering ; electrical conductivitiy ; optical transparency ; high-temperature oxidation resistance Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Obor OECD Nuclear physics CEP LM2015056 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora UJF-V - RVO:61389005 UT WOS 000429409800045 EID SCOPUS 85044437447 DOI 10.1016/j.tsf.2018.03.064 Anotace The paper deals with Hf-B-Si-C-N films deposited onto Si and SiC substrates using pulsed magnetron cosputtering of a single B4C-Hf-Si target (at fixed 15% Hf and 20% Si fractions in the target erosion area) in argon-nitrogen gas mixtures. We focus on the effect of the nitrogen fraction in the gas mixture (in the range from 0% to 50%) and of the voltage pulse length (50 mu s and 85 mu s with the corresponding duty cycle of 50% and 85%, respectively) on the structure and properties of the films. We show that an increasing nitrogen fraction in the gas mixture and consequently in the films (up to 52 at.%) results in a strong amorphization of the film structure, decrease in the film hardness, and rapid rise in the electrical resistivity and the optical transparency of the films. Very high oxidation resistance in air even up to 1500 degrees C is demonstrated for two sufficiently hard (20-22 GPa) Hf-B-Si-C-N films: the electrically conductive Hf7B23Si22C6N40 film and the optically transparent Hf6B21Si19C4N47 film, both with a contamination level < 3 at.%. The results are important for designing hightemperature protective coatings of electronic and optical elements, and sensors for severe oxidation environments. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2019
Počet záznamů: 1