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Lift-off technology for thick metallic microstructures
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SYSNO ASEP 0485656 Druh ASEP C - Konferenční příspěvek (mezinárodní konf.) Zařazení RIV D - Článek ve sborníku Název Lift-off technology for thick metallic microstructures Tvůrce(i) Krátký, Stanislav (UPT-D) RID, ORCID, SAI
Horáček, Miroslav (UPT-D) RID, ORCID, SAI
Meluzín, Petr (UPT-D) RID, ORCID, SAI
Kolařík, Vladimír (UPT-D) RID, ORCID, SAI
Matějka, Milan (UPT-D) RID, ORCID, SAI
Oulehla, Jindřich (UPT-D) RID, ORCID, SAI
Pesic, Z. (GB)Celkový počet autorů 7 Zdroj.dok. METAL 2017. 26th International Conference on Metallurgy and Materials. Conference Proceedings. - Ostrava : TANGER, 2017 - ISBN 978-80-87294-79-6 Rozsah stran s. 1298-1302 Poč.str. 5 s. Forma vydání Nosič - C Akce METAL 2017: International Conference on Metallurgy and Materials /26./ Datum konání 24.05.2017 - 26.05.2017 Místo konání Brno Země CZ - Česká republika Typ akce WRD Jazyk dok. eng - angličtina Země vyd. CZ - Česká republika Klíč. slova lift-off technique ; SU-8 photoresist ; e-beam lithography ; thick layer evaporation Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika Obor OECD Coating and films CEP TE01020233 GA TA ČR - Technologická agentura ČR LO1212 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy ED0017/01/01 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora UPT-D - RVO:68081731 UT WOS 000434346900208 Anotace This paper deals with a method enabling the preparation of thick metallic microstructures on metal substrates. Such metallic microstructures can be used as a resolution samples to characterize various microanalysis techniques, such as X-ray fluorescence (XRF) or X-ray photoelectron spectroscopy (XPS). Moreover, the
patterned samples could be used as anodes to characterize focusing properties of X-ray tubes for micro CT systems. Considering that the standard lift-off technique is designated for structures with the thickness of several hundred nanometers at most, we had to modify lift-off technique to be possible to use it for preparation of very thick metal layers (several microns) with spatial resolution of a few microns. The mask with the desired pattern for UV exposure was prepared by e-beam lithography. SU-8 photoresist was used for a lift-off because of its aspect ratio ability, process purity and high resistance to heating. We used a thin layer of PMMA under the SU-8 masking layer to guarantee the photoresist would lift-off correctly. Thick aluminum layer was deposited by thermal evaporation. The dependence of metal layer thickness as a function of required exposed
line width was determined. The final lift-off process was carried out in acetone ultrasonic bath. Generally, this technology can be used for the evaporate deposition of various materials with several microns thick layer in
micron resolution.Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2018
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